DMTH8008LFG中文资料80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书

描述 Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high- efficiency power management applications.

特性 Features

•Rated to +175°C – Ideal for High Ambient Temperature Environments
•Low RDS(ON) – Ensures On-State Losses are Minimized
•Excellent Qgd × RDS(ON) Product (FOM)
•Advanced Technology for DC-DC Converters
•Small Form Factor Thermally Efficient Package Enables Higher Density End Products
•Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
•Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
•This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

应用 Application

• Backlighting

• Power Management Functions

• DC-DC Converters