DMHT10H032LFJ中文资料美台半导体数据手册PDF规格书

特性 Features

 Thermally Efficient Package – Cooler Running Applications

 High Conversion Efficiency

 Low RDS(ON) – Minimizes On-State Losses

 Low Input Capacitance

 Fast Switching Speed

 100 Unclamped Inductive Switching (UIS) Test in Production –

Ensures More Reliable and Robust End Application

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 For automotive applications requiring specific change control

(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and

manufactured in IATF 16949 certified facilities), please

contact us or your local Diodes representative.

描述 Description

This new generation complementary MOSFET H-Bridge features low

on-resistance achievable with low gate drive.

Applications

 Motor Control

 DC-DC Converters

 Power Management