Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes

文件：378.26 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

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RF MOSFET Power Transistor, 4OW, 28V 2 - 175 MHz

Features • N-Channel Enhancement Mode Device • DMOS Structure • Lower Capacitances for Broadband Operation • High Saturated Output Power • Lower Noise Figure Than Bipolar Devices

文件：188.42 Kbytes 页数：3 Pages

MACOM

RF Power MOSFET Transistor 40W, 2-175MHz, 28V

Features • N-Channel enhancement mode device • DMOS structure • Lower capacitances for broadband operation • High saturated output power • Lower noise figure than bipolar devices • RoHS Compliant

文件：164.49 Kbytes 页数：3 Pages

MA-COM

RF Power MOSFET Transistor

文件：164.49 Kbytes 页数：3 Pages

MA-COM