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ISL9000AIRFDZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRFDZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRFDZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9000AIRFJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRFJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRFJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9000AIRGCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRGCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRGPZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRGPZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJBZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJBZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9000AIRJBZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9000AIRJMZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1µFto10µFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJMZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9000AIRJMZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9000AIRJNZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanin

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

详细参数

  • 型号:

    DM9000BE

  • 制造商:

    DAVICOM

  • 制造商全称:

    DAVICOM

  • 功能描述:

    Ethernet Controller with General Processor Interface

供应商型号品牌批号封装库存备注价格
DAVICOM
1436+
QFP48
30000
绝对原装进口现货可开增值税发票
询价
DAVICOM
QFP48
172
正品原装--自家现货-实单可谈
询价
DAVICOM
23+
QFP
1005
全新原装现货
询价
DAVICOM
2020+
LQFP48
80241
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
DAVICO
22+
QFP100
6980
原装现货,可开13%税票
询价
DAVICOM
1741+
LQFP
6528
只做进口原装正品假一赔十!
询价
DAVICOM
17+
QFP48
9800
只做全新进口原装,现货库存
询价
DAVICOM
19+
LQFP48
68967
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
DAVICOM
23+
QFP48
8560
受权代理!全新原装现货特价热卖!
询价
23+
NA
350
专做原装正品,假一罚百!
询价
更多DM9000BE供应商 更新时间2024-5-31 10:08:00