Dual 4-Input NAND Gate

General Description This device contains two independent gates, each of which performs the logic NAND function. Features ■ Switching specifications at 50 pF ■ Switching specifications guaranteed over full temperature and VCC range ■ Advanced oxide-isolated, ion-implanted Schottky TT

文件：46.22 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual 4-Input NAND Gate

General Description This device contains two independent gates, each of which performs the logic NAND function. Features ■ Switching specifications at 50 pF ■ Switching specifications guaranteed over full temperature and VCC range ■ Advanced oxide-isolated, ion-implanted Schottky TT

文件：46.22 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual 4-Input NAND Gate

General Description This device contains two independent gates, each of which performs the logic NAND function. Features ■ Switching specifications at 50 pF ■ Switching specifications guaranteed over full temperature and VCC range ■ Advanced oxide-isolated, ion-implanted Schottky TT

文件：46.22 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Dual 4-Input NAND Gate

ONSEMI

安森美半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14SOIC

ONSEMI

安森美半导体

Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14SOIC

ONSEMI

安森美半导体

Package：14-DIP（0.300"，7.62mm）；包装：管件 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 2CH 4-INP 14DIP

ONSEMI

安森美半导体