8-Input NAND Gate

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NSCNational Semiconductor (TI)

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8-Input NAND Gate

TI

德州仪器

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

文件：223.45 Kbytes 页数：7 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Features • Low RDS(on) – Ensures On State Losses Are Minimized • 100 Unclamped Inductive Switching, Test in Production – Ensures More Reliable And Robust End Application • Small Form Factor Thermally Efficient Package Enables Higher Density End Products • Occupies Just 33 of The Board Area Occ

文件：428.12 Kbytes 页数：7 Pages

DIODES

美台半导体

TTL HD74/HD74S Series

文件：143.51 Kbytes 页数：4 Pages

HitachiHitachi Semiconductor

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