RED LASER DIODE

Features • wavelength : 658 nm (Typ.) • High output power :100 mW at 70°C (pulse) • Low threshold current : Ith = 35 mA (Typ.) • Small package : ø5.6 mm • TE mode Applications • DVD-R/±RW/RAM

文件：17.09 Kbytes 页数：1 Pages

SANYO

三洋

RED LASER DIODE

ONSEMI

安森美半导体

Photomicrosensor (Transmissive)

文件：231.12 Kbytes 页数：4 Pages

OMRON

欧姆龙

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max

文件：369.53 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件：470.98 Kbytes 页数：8 Pages

SANYO

三洋