RED LASER DIODE

Features • Wavelength : 675 nm (Typ.) • Low threshold current : Ith = 40 mA (Typ.) • Beam Number : 2 • Beam Distance : 100µm • Small package : ø5.6mm Applications • Laser Beam Printer (LBP)

文件：21.51 Kbytes 页数：2 Pages

SANYO

三洋

RED LASER DIODE

ONSEMI

安森美半导体

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

文件：151.93 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

文件：153.95 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

文件：88.84 Kbytes 页数：7 Pages

PHI

PHI