接近开关专用电路

DK355是针对电感式接近开关应用而开发的专用集成电路，可广泛应用于各种接近传感器或接近控制系统中，也可用来制作多种感应式检测仪表，如感应式转速表等。DK355 具有集成度高、工作电压 特点低开环电流：IS<1mA低输出饱和压降温度对开关距离的影响小,谐振电路的TC(温度系数) 容易补偿灵敏度高，能使开关距离更远，对线圈的质量要求不高相同的温度、电源电压和开关距离条件下，回差基本保持不变输出电路在短时间内具有短路保护（大约10秒到1分钟，根据封装形式而定）较高的开关频率小型化封装;

DK-Micro

东科微

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS

DESCRIPTION These circuits are monolithic J-FET input operational amplifiers incorporating well matched, high voltage J-FET on the same chip with standard bipolar transistors. This amplifiers feature low input bias and offset currents, low input offset voltage and input offset voltage drift,coup

文件：250.11 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz

Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: ● Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with the Optimum in Transistor Ruggednes

文件：20.21 Kbytes 页数：2 Pages

NTE