Current Shunt Monitor

 Features  Supply voltage: 3 V to 40 V  Common-mode voltage: -0.1 V to 75 V  Low quiescent current: 450 μA (typ)  High accuracy: − Low offset voltage of ±0.1 mV (max) − ±0.8% max total output error  Gain: 50 V/V  High slew rate: 3 V/μs  -3 dB bandwidth: 100 kHz  Operating te

文件：1.87634 Mbytes 页数：13 Pages

DIOO

帝奥微

Current Shunt Monitor

 Features  Supply voltage: 3 V to 40 V  Common-mode voltage: -0.1 V to 75 V  Low quiescent current: 450 μA (typ)  High accuracy: − Low offset voltage of ±0.1 mV (max) − ±0.8% max total output error  Gain: 50 V/V  High slew rate: 3 V/μs  -3 dB bandwidth: 100 kHz  Operating te

文件：1.87634 Mbytes 页数：13 Pages

DIOO

帝奥微

Current Shunt Monitor

 Features  Supply voltage: 3 V to 40 V  Common-mode voltage: -0.1 V to 75 V  Low quiescent current: 450 μA (typ)  High accuracy: − Low offset voltage of ±0.1 mV (max) − ±0.8% max total output error  Gain: 50 V/V  High slew rate: 3 V/μs  -3 dB bandwidth: 100 kHz  Operating te

文件：1.87634 Mbytes 页数：13 Pages

DIOO

帝奥微

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：36.07 Kbytes 页数：2 Pages

POLYFET

NPN SILICON BIAS RESISTOR TRANSISTOR

文件：150.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

文件：235.22 Kbytes 页数：17 Pages

PANASONIC

松下