丝印：DI；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

Load Switching Applications • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)

文件：234.07 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：DI；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.46906 Mbytes 页数：44 Pages

TI

德州仪器

丝印：DI；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.47199 Mbytes 页数：44 Pages

TI

德州仪器

丝印：DI；Package：X2SON(DQN)；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features . Typical accuracy: 0.5% . Supports 200-mA output . Low IQ: 25 μA . Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) . High PSRR: . 70 dB at 100 Hz . 50 dB at 1 MHz . Stable with effective capacitance of 0.1 μF(2) . Thermal shutdown and overcurrent protec

文件：1.46837 Mbytes 页数：45 Pages

TI

德州仪器

丝印：DI；Package：X2SON(DQN)；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features . Typical accuracy: 0.5% . Supports 200-mA output . Low IQ: 25 μA . Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) . High PSRR: . 70 dB at 100 Hz . 50 dB at 1 MHz . Stable with effective capacitance of 0.1 μF(2) . Thermal shutdown and overcurrent protec

文件：1.46837 Mbytes 页数：45 Pages

TI

德州仪器

丝印：DI；Package：X2SON(DQN)；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features . Typical accuracy: 0.5% . Supports 200-mA output . Low IQ: 25 μA . Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) . High PSRR: . 70 dB at 100 Hz . 50 dB at 1 MHz . Stable with effective capacitance of 0.1 μF(2) . Thermal shutdown and overcurrent protec

文件：1.46837 Mbytes 页数：45 Pages

TI

德州仪器

丝印：DI；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.46906 Mbytes 页数：44 Pages

TI

德州仪器

丝印：DI；Package：X2SON；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features • Typical accuracy: 0.5 • Supports 200-mA output • Low IQ: 25 μA • Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) • High PSRR: – 70 dB at 100 Hz – 50 dB at 1 MHz • Stable with effective capacitance of 0.1 μF(2) • Thermal shutdown and overcurrent protection

文件：1.47199 Mbytes 页数：44 Pages

TI

德州仪器

丝印：DI；Package：X2SON(DQN)；TLV707, TLV707P 200-mA, Low-IQ, Low-Noise, Low-Dropout Regulator for Portable Devices

1 Features . Typical accuracy: 0.5% . Supports 200-mA output . Low IQ: 25 μA . Fixed-output voltage combinations possible from 0.85 V to 5.0 V(1) . High PSRR: . 70 dB at 100 Hz . 50 dB at 1 MHz . Stable with effective capacitance of 0.1 μF(2) . Thermal shutdown and overcurrent protec

文件：1.46837 Mbytes 页数：45 Pages

TI

德州仪器

丝印：DI；Package：DSBGA(YZU)；TPS720 350 mA, Ultra-Low VIN, RF Low-Dropout Linear Regulator With Bias Pin

1 Features 1• 350-mA High-Performance LDO • Low Quiescent Current: 38 μA • Excellent Load Transient Response: ±15 mV for ILOAD = 0 mA to 350 mA in 1 μs • Excellent Line Transient Response: ΔVOUT = ±2 mV for ΔVBIAS = ±600 mV in 1 μs ΔVOUT = ±200 μV for ΔVIN = ±400 mV in 1 μs • Low Noise: 48

文件：1.64861 Mbytes 页数：39 Pages

TI

德州仪器