1200V/75A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  Low switching loss  Maximum junction temperature 175oC

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STARPOWER

斯达半导体

分立器件

StarPower

斯达半导体

BGA

INTEL

英特尔

上传：深圳市华来深电子有限公司

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INTEL(英特尔)

上传：深圳市盈慧通电子有限公司

INTEL(英特尔)

上传：深圳市盈慧通电子有限公司