0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

FEATURES • Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range) • Leakage current

文件：240.36 Kbytes 页数：15 Pages

VISHAYVishay Siliconix

威世威世科技公司

0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

文件：192.39 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch

文件：190.35 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low voltage high performance mixer FM IF system with high-speed RSSI

文件：173.4 Kbytes 页数：17 Pages

PHI

PHI

DIFFERENTIAL VARIABLE GAIN AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This TS636 is particularly intended for applications such as preamplification in telecommunication systems using multiple carriers. It has been minly designed to fit with ADSL chip-sets such as ASCOT ADSL chip-set for CPE. The TS636 is a differential digitally controled variable

文件：121.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

DIFFERENTIAL VARIABLE GAIN AMPLIFIER FOR ADSL LINE INTERFACE

DESCRIPTION This TS636 is particularly intended for applications such as preamplification in telecommunication systems using multiple carriers. It has been minly designed to fit with ADSL chip-sets such as ASCOT ADSL chip-set for CPE. The TS636 is a differential digitally controled variable

文件：121.62 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体