1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

DESCRIPTION The DG611/612/613 feature high-speed low-capacitance lateral DMOS switches. Charge injection has been minimized to optimize performance in fast sample-and-hold applications. FEATURES ● Fast Switching— tON: 12 ns ● Low Charge Injection:
2 pC ● Wide Bandwidth: 500 MHz ● 5-V CMOS L

文件：194.23 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

FEATURES • Halogen-free according to IEC 61249-2-21 Definition • Low charge injection (1 pC typ.) • Leakage current

文件：327.35 Kbytes 页数：17 Pages

VishayVishay Siliconix

威世威世科技公司

1 pC Charge Injection, 100 pA Leakage, Quad SPST Switches

文件：240.42 Kbytes 页数：15 Pages

VishayVishay Siliconix

威世威世科技公司

Dynex

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INTEL(英特尔)

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