1200V/40A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  M

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STARPOWER

斯达半导体

T2.0-Trench FS IGBT,Low Loss

额定电压: 1200V\n额定电流: 40A\n电路结构: G=IGBT+FWD\n芯片系列: X=Trench FS IGBT, Low Loss;

StarPower

斯达半导体

CDIP16

INTERSIL

上传：深圳市翔睿腾科技有限公司

SOP-16

INTERSIL

上传：深圳市得捷芯城科技有限公司

TSSOP16

INTERSIL

上传：深圳庞田科技有限公司