1200V/25A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  M

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STARPOWER

斯达半导体

T2.0-Trench FS IGBT,Low Loss

额定电压: 1200V\n额定电流: 25A\n电路结构: G=IGBT+FWD\n芯片系列: X=Trench FS IGBT, Low Loss;

StarPower

斯达半导体

BGA

MICROSOFT

微软

上传：深圳市旺财半导体有限公司

SOP16

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市斌腾达科技有限公司

16-SOIC

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市铭尔达科技有限公司