1200V/10A IGBT with Diode

General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  M

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STARPOWER

斯达半导体

分立器件

StarPower

斯达半导体

DIP16镀金

SILICONI

上传：深圳市壹芯创科技有限公司

BGA

MICROSOFT

微软

上传：深圳市旺财半导体有限公司

SOP16

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市斌腾达科技有限公司