DF2B5M4ASL-TP

Low Capacitance Bi-directional ESD DIODE |

Features oLowoperatingvoltage:5V «Ultralowcapacitance:0.08pF(typ) oUltralowleakage:nAlevel oLowclampingvoltage o—IEC61000-4-2(ESD)immunitytest Airdischarge:+12kV/ Contactdischarge:+8kV —IEC61000-4-4(EFT)40A(5/50ns) —IEC61000-4-5(Lightning)2.5A(8

DF2B5M4ASL

ESDProtectionDiodesSiliconEpitaxialPlanar

DF2B5M4CT

ESDProtectionDiodesSiliconEpitaxialPlanar

Applications MobileEquipment Smartphones Tablets NotebookPCs DesktopPCs Features (1)Suitableforusewitha3.3Vsignalline.(VRWM≤3.6V) (2)ProtectsdeviceswithitshighESDperformance. (VESD=±20kV(Contact/Air)@IEC61000-4-2) (3)Lowdynamicresistanceprotects

DF2B5M4CT

1-CHANNELULTRALOWCAPACITANCEESDDIODE

Features Ultralowleakage:nAlevel Operatingvoltage:3.3V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±25kV Contactdischarge:±20kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4A(8/20μs) RoHSCompliant

DF2B5M4SL

ESDProtectionDiodesSiliconEpitaxialPlanar