DEM2612C

Low profile (2.6 x 2.8 mm square, 1.2mm Max.height).

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

DG2612

Low-Voltage,LowrON,SPDTAudioSwitchwithNegativeSwingCapability

DG2612

Low-Voltage,LowRON,SPDTAudioSwitchwithNegativeSwingCapability

FEATURES •Lowvoltageoperation(1.8Vto5.5V) •Lowon-resistance-RON:1.0Ωat2.7V •Highbandwidth BENEFITS •Negativesignalswingcapability •Shuntswitchtoeliminateswitchingnoise •SimplifieddesignwithdirectDCcoupling •SpacesavingSC-89package APPLICATIONS •

EC2612

40GHzSuperLowNoisePHEMT

Description TheEC2612isbasedona0.15µmgatepseudomorphichighelectronmobilitytransistor(0.15µmPHEMT)technology.Gatewidthis120µmandthe0.15µmT-shapedaluminiumgatefeatureslowresistanceandexcellentreliability.Thedeviceshowsaveryhightransconductancewhichleadsto

EC2612

40GHzSuperLowNoisepHEMT

EDAB2612

EDAB2xxx-Series

ProductDescription BasesforE-SerieCabinetswithknockoutsforcableentry.Thebaseisconstructedoutoftwosideprofileswhichcorrespondtothedepthofthecabinet,andtwocoverpanels(frontandback)withacorrespondingwidth..

FDC2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •1.1

FDC2612

N-ChannelMOSFET200V,1.5A,0.7

Features Vbs=200V b=1.5A Roson)

FDD2612

200VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON)andfastswitchingspeed. Features •4.9A,2