DE2810C

Fixed Inductors for Surface Mounting

FEATURES •Lowprofile(2.8×3.0mmsquare,1.0/1.2/1.5/1.8mmMax.height). •MagneticallyshieldedconstructionandlowDCresistance. •IdealforavarietyofDC-DCconverterinductorapplications.(DVC,DSC,Cellularphone,PDA) •RoHScompliant

DE2810C

PMIC with Integrated Charger and Smart Power Selector for Handheld Devices

DEM2810C

Lowprofile(2.8x3.0mmsquare,1.0/1.2/1.5/1.8mm

DSB2810

SCHOTTKYBARRIERDIODES

SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444

DSB2810

SCHOTTKYBARRIERDIODES

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

DSB2810

SCHOTTKYBARRIERDIODES

•1N5711-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/444 •1N5712-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/445 •SCHOTTKYBARRIERDIODES •HERMETICALLYSEALED •METALLURGICALLYBONDED

DSB2810

SchottkyBarrierDiodeQualifiedperMIL-PRF-19500/444

DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES •JEDECregistered1N5711-1,1N5712-1,1

DU2810

RFMOSFETPowerTransistor,lOW,28V2-175MHz

Features •N-ChannelEnhancementModeDevice •DMOSStructure •LowerCapacitancesforBroadbandOperation •CommonSourceConfiguration •LowNoiseFloor

DU2810S

RFMOSFETPowerTransistor,lOW,28V2-175MHz

Features •N-ChannelEnhancementModeDevice •DMOSStructure •LowerCapacitancesforBroadbandOperation •CommonSourceConfiguration •LowNoiseFloor

DU2810S

RFPowerMOSFETTransistor10W,2-175MHz,28V

Features •N-Channelenhancementmodedevice •DMOSstructure •Lowercapacitancesforbroadbandoperation •Commonsourceconfiguration •Lownoisefloor •RoHSCompliant