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DE150-201N09A中文资料PDF规格书
DE150-201N09A规格书详情
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other hazardous materials
Advantages
• Optimized for RF and high speed switching at frequencies to >100MHz
• Easy to mount—no insulators needed
• High power density
产品属性
- 型号:
DE150-201N09A
- 制造商:
IXYS
- 制造商全称:
IXYS Corporation
- 功能描述:
RF Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Littelfuse/IXYS |
23+ |
DE150 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
MURATA |
7000 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | ||||
21+ |
N/A |
5664 |
全新原装亏本出13157115792 |
询价 | |||
MUR |
23+ |
NA |
2486 |
专做原装正品,假一罚百! |
询价 | ||
MUR |
AC250D15TT10 |
DE1E3KX472MA5BA01 |
60000 |
全新原装现货 样品可售 |
询价 | ||
MURATA |
23+ |
65480 |
询价 | ||||
MUR |
D/C00 |
100 |
询价 | ||||
MURATA |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
MURATA |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
IXYS |
14 |
6000 |
绝对原装自己现货 |
询价 |