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DDRSDRAM1111中文资料PDF规格书
DDRSDRAM1111规格书详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 2, 2.5 (clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval(4K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II package
产品属性
- 型号:
DDRSDRAM1111
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
DDR SDRAM Specification Version 1.0
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
2023+ |
SS0P30 |
3785 |
全新原厂原装产品、公司现货销售 |
询价 | ||
C&K |
21+ |
插件 |
35000 |
航宇科工半导体-央企合格优秀供方 |
询价 | ||
LTK |
23+ |
原厂封装 |
90000 |
一定原装深圳现货 |
询价 | ||
LTK |
2012+ |
320 |
普通 |
询价 | |||
C&KCOMPONENT |
23+ |
65480 |
询价 | ||||
SAM |
22+ |
NA |
30000 |
100%全新原装 假一赔十 |
询价 | ||
宏澤电子 |
2308+ |
425695 |
一级代理,原装正品,公司现货! |
询价 | |||
宏澤电子 |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
Herotek |
23+ |
模块 |
400 |
询价 | |||
C&K |
23+ |
7300 |
专注配单,只做原装进口现货 |
询价 |