P6SMB91CA

Marking：DD；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

P6SMBJ54C

Marking：DD；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

PDTC144WM

Marking：DD；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver. DESCRIPTION NPNresistor-equippedtransistor(see“Simplif

PDTC144WM

Marking：DD；Package：SOT883；NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PDTC144WM

Marking：DD；Package：DFN1006-3；50 V, 100 mA NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = 22 kΩ

1.Generaldescription NPNResistor-EquippedTransistor(RET)inanleadlessultrasmallSOT883(SC-101)Surface- MountedDevice(SMD)plasticpackage. PNPcomplement:PDTA144WM 2.Featuresandbenefits •Built-inbiasresistors •Simplifiescircuitdesign •Reducescomponentcount •Red

SMBJ45C

Marking：DD；Package：DO-214AA；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0

SMBJ54C

Marking：DD；Package：DO-214AA；3.3 To 440V 600W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan1μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate

SMBJ54C

Marking：DD；Package：DO-214AA；SAMYANG ELECTRONICS

600WattPeakPower Dimension

ADP166ACBZ-2.85-R7

Marking：DD；Package：WLCSP；Very Low Quiescent Current, 150 mA, LDO Regulator

BD4823

Marking：DD；Standard CMOS Voltage Detector IC