MJE13003A

SWITCHINGREGULATORAPPLICATION.

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEEDSWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=1.1μS(Max.),tf=0.7μS(Max.),atIC=1.5A •HighCollectorVoltage:VCBO=700V.

MJE13003A

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector–EmitterSustainingVoltage :VCEO(SUS)=400V(Min.) •CollectorSaturationVoltage :VCE(sat)=1.0(Max)@IC=1.0A APPLICATIONS •Designedforuseinhigh-voltage,high-speed,powerswitching ininductivecircuit,theyareparticularlysuitedfor 115an

MJE13003A

NPNSiliconPlastic-EncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1.25WattsofPowerDissipatio

MJE13003B

SWITCHINGREGULATORAPPLICATION.

SWITCHINGREGULATORAPPLICATION. HIGHVOLTAGEANDHIGHSPEED SWITCHINGAPPLICATION. FEATURES •ExcellentSwitchingTimes :ton=0.5μS(Max.),tf=0.7μS(Max.),atIC=1A •HighCollectorVoltage:VCBO=700V.

MJE13003B

NPNSiliconPlastic-EncapsulateTransistor

MJE13003B

HighVoltageFast-switchingNPNPowerTransistor

DESCRIPTION: ThedeviceismanufacturedusinghighvoltageMultiEpitaxialPlanartechnologyforhighswitchingspeedsandmediumvoltagecapability. ItusesaCellularEmitterstructurewithplanaredgeterminationtoenhanceswitchingspeedswhilemaintainingthewideRBSOA. TheMJE13003Bis

MJE13003B

NPNSiliconPlastic-EncapsulateTransistor

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •Capableof1.0WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage700V •Operatingandstorage

MJE13003B

NPNMJESERIESTRANSISTORS