DC35GN-15-Q4中文资料RF/Microwave GaN on SiC Power Devices, Pallets and Modules数据手册Microchip规格书

描述 Description

The DC35GN-15-Q4 is a COMMON SOURCE, class -AB, GaN on SiC HEMT transistor capable of broadband pulsed and CW RF power applications. This transistor utilizes gold metallization, air-cavity Cu-base QFN package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness.FeaturesWide-band DC-3.5 GHz general purpose driver applicationsIdeal for Pulsed Radar, Avionics, ISM, and CW Communication15 W Pulsed and CW Psat and 18 dB Power Gain @ 1.4 GHzLow-cost QFN package with excellent RF & Thermal performance50V Bias Operation with high breakdown voltage  ROHS, PB Free

简介

DC35GN-15-Q4属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的DC35GN-15-Q4晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。