DC2FD5AAA

SUBMINIATURE — SEALED

Features lEnclosedswitchcomplyingwithIP6K7 lSilicon-freeversionavailable lModelsavailableforoperating temperaturesupto120°C lRatedforcurrentsupto10amp at250VAC lRangeofauxiliaryactuatorsavailable (canalsoberetrofitted) lVariouscontactmaterialsavailable,

DC2FD5LA

SUBMINIATURE—SEALED

Features lEnclosedswitchcomplyingwithIP6K7 lSilicon-freeversionavailable lModelsavailableforoperating temperaturesupto120°C lRatedforcurrentsupto10amp at250VAC lRangeofauxiliaryactuatorsavailable (canalsoberetrofitted) lVariouscontactmaterialsavailable,

PESDMC2FD5VB

ULTRALOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

PESDNC2FD5VB

1-LineBi-directionalTVSDiode

Features Ultrasmallpackage:1.0x0.6x0.5mm Ultralowcapacitance:15pFtypicalUltralowleakage:nAlevel Lowoperatingvoltage:5V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±3

PESDNC2FD5VB

ESDProtectionDevicesROHS

Feature 80Wpeakpulsepowerperline(tP=8/20μs) DFN1006package ReplacementforMLV(0402) Bidirectionalconfigurations Responsetimeistypically

PESDNC2FD5VB

80Wpeakpulsepowerperline(tP=8/20μs)

ThePESDNC2FD5VBprotectssensitive semiconductorcomponentsfromdamageor upsetduetoelectrostaticdischarge(ESD)and othervoltageinducedtransientevents.They featurelargecross-sectionalareajunctionsfor conductinghightransientcurrents,offer desirableelectricalcharacterist

PESDSC2FD5VB

ULTRALOWCAPACITANCEBIDIRECTIONALTVSDIODE

Features Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)40A(5/50ns) –IEC61000-4-5(Lightning)4.5A(8/20μs) RoHSCompliant

PESDUC2FD5VB

ESDProtector