包装：袋 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：DEMO BOARD FOR LTC5586

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亚德诺

2SC3229

文件：177.97 Kbytes 页数：5 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：475.48 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Silicon Darlington Transistors High Current, General Purpose

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC

文件：26.78 Kbytes 页数：2 Pages

NTE