Single Phase 1.0 AMP. Glass Passivated Bridge Rectifiers

Features • Glass passivated junction • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • High surge current capability • High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs., ( 2.3 kg ) tension • Small size, simple installati

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LUGUANG

鲁光电子

Silicon epitaxial planar type

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PANASONIC

松下

Silicon PNP Transistor Audio Amplifier, Switch (Compl to NTE123AP)

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . .

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NTE

Silicon Complementary Transistors General Purpose

Description: The NTE123A (NPN) and NTE159M (PNP) are widely used “Industry Standard” complementary transistors in a TO18 type case designed for applications such as medium–speed switching and amplifiers from audio to VHF frequencies. Features: ● Low Collector Saturation Voltage: 1V (Max) ● Hig

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NTE