ESD3V3CA

ESDProtectionDiodesinSMD

ESD3V3CA

ESDProtectionDiodesinSMD

ESD3V3CA

ESDProtectionDiodesinSMD

ESDB3V3C

ESDProtectionDiodesinSMD

ESDBK3V3

ESDProtectionDiodesinSMD

ESDLC3V3LB

BIDIRECTIONALTVSDIODE

Features Protectsonedataline Ultralowleakage:nAlevel Operatingvoltage:3.3V Ultralowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) RoHSCompliant App

ESDSLC3V3

UltraLowCapacitanceESDTVSArray

Features ■35Wattspeakpulsepower(tp=8/20μs) ■SOT-23package ■Lowclampingvoltage ■Lowleakagecurrent ■Ultralowcapacitance ■ESDProtectionforhigh-speeddatalinesto: IEC61000-4-2±30KVcontact±30KVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)3.5A(8/2

ESDSUC3V3BS

UltraLowCapacitanceESD

Features ■μs) ■ ■ ■R2R+Zenertechnology ■Lowclampingvoltage ■Lowleakagecurrent ■Ultralowcapacitance(Cj=0.3pFtyp.) ■Protectiononedata/powerlineto: IEC61000-4-2±10kVcontact±18kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)3A(8/20μs) ■RoHScomp

FBU3V3DS

Plastic-EncapsulateDiodes

DESCRIPTION DesignedtoprotectvoltagesensitiveelectroniccomponentsfromESDandothertransients. Excellentclampingcapability,lowleakage,lowcapacitance,andfastresponsetime providebestinclassprotectionondesignsthatareexposedtoESD. Thecombinationofsmallsize,lowcap

FESD3V3A

ChipTVSDiode