DAM25N60D

N-Channel Enhancement Mode MOSFET

FCH25N60N

N-ChannelMOSFET

FCH25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=126mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

FCH25N60N

MOSFET–N-Channel,SUPREMOS600V,25A,126m

Description TheSUPREMOS®MOSFETisONSemiconductor’snext generationofhighvoltagesuper−junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon−re

FCI25N60N

N-ChannelSupreMOS짰MOSFET600V,25A,125m廓

FCP25N60N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.125Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

FCP25N60N

N-ChannelSupreMOS짰MOSFET600V,25A,125m廓

MTY25N60E

N?묬hannelPowerMOSFET

MTY25N60E

TMOSPOWERFET25AMPERES600VOLTSRDS(on)=0.21OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

SCT25N60FD

Triac