丝印：DAC5672EP；Package：TQFP；DUAL 14-BIT 200-MSPS DIGITAL-TO-ANALOG CONVERTER

FEATURES · Controlled Baseline – One Assembly – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · 14-Bit Dual Transmit

文件：1.06854 Mbytes 页数：30 Pages

TI

德州仪器

DUAL 14-BIT 200-MSPS DIGITAL-TO-ANALOG CONVERTER

文件：1.18728 Mbytes 页数：27 Pages

TI

德州仪器

丝印：DAC5672EP；Package：TQFP；DUAL 14-BIT 200-MSPS DIGITAL-TO-ANALOG CONVERTER

FEATURES · Controlled Baseline – One Assembly – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree (1) · 14-Bit Dual Transmit

文件：1.06854 Mbytes 页数：30 Pages

TI

德州仪器

N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mohm

文件：523.63 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel UltraFET Trench짰 MOSFET

文件：541.88 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N-Channel UltraFET Trench® MOSFET 60V, 22A, 11.5mΩ

Features Max rDS(on) = 11.5mΩ at VGS = 10V, ID = 10.6A Max rDS(on) = 16.5mΩ at VGS = 6V, ID = 8A Typ Qg = 32nC at VGS = 10V Low Miller Charge Optimized Efficiency at High Frequencies RoHS Compliant General Description UItraFET devices combine characteristics that enable benchmark e

文件：668.75 Kbytes 页数：8 Pages

ONSEMI

安森美半导体