加速度传感器

• Supply\tvoltage,\t1.62V\tto\t3.6V\r\n• For\t2x2x1.1\tmm\tLGA-12\tpackage\r\n• User\tselectable\trange,\t±2g,\t±4g,\t±8g,\t±16g\r\n• User\tselectable\tdata\toutput\trate\r\n• Digital\tI2\r\nC/SPI\toutput\tinterface\r\n• 14\tbit\tresolution\r\n• Low\tpower\tconsumption\r\n• 2\tProgrammable\tinterrup;

MiraMEMS

明皜传感

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

文件：17.41 Kbytes 页数：2 Pages

NTE

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：158.25 Kbytes 页数：6 Pages

POINN

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

文件：158.25 Kbytes 页数：6 Pages

POINN