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MZ859

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NTE859

IntegratedCircuitQuad,LowNoise,JFETInputOperationalAmplifier

Description: TheNTE859(14–LeadDIP)andNTE859SM(SOIC–14SurfaceMount)JFET–inputoperationalamplifiersarelownoiseamplifierswithlownoiseinputbias,offsetcurrents,andfastslewrate.Thelowharmonicdistortionandlownoisemakethesedevicesideallysuitedasamplifiersforhigh–

NTE

NTE Electronics

NTE859SM

IntegratedCircuitQuad,LowNoise,JFETInputOperationalAmplifier

Description: TheNTE859(14–LeadDIP)andNTE859SM(SOIC–14SurfaceMount)JFET–inputoperationalamplifiersarelownoiseamplifierswithlownoiseinputbias,offsetcurrents,andfastslewrate.Thelowharmonicdistortionandlownoisemakethesedevicesideallysuitedasamplifiersforhigh–

NTE

NTE Electronics

OPA859

OPA859-Q11.8-GHzUnity-GainBandwidth,3.3-nV/?숰z,FETInputAmplifier

TITexas Instruments

德州仪器美国德州仪器公司

OPA859

1.8GHzUnity-GainBandwidth,3.3-nV/?숰z,FETInputAmplifier

TI1Texas Instruments

德州仪器美国德州仪器公司

OPA859

OPA8561.1-GHzUnity-GainBandwidth,0.9nV/?숰z,BipolarInputAmplifier

TITexas Instruments

德州仪器美国德州仪器公司

OPA859

OPA810140-MHz,Rail-to-RailInput/Output,FET-InputOperationalAmplifier

TI1Texas Instruments

德州仪器美国德州仪器公司

OPA859

OPA859-Q11.8-GHzUnity-GainBandwidth,3.3-nV/?숰z,FETInputAmplifier

TITexas Instruments

德州仪器美国德州仪器公司

OPA859

OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features •Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenois

TITexas Instruments

德州仪器美国德州仪器公司

OPA859

OPA814600-MHz,High-Precision,Unity-GainStable,FET-InputOperationalAmplifier

1Features •Widebandwidth: –Gain-bandwidthproduct:250MHz –Bandwidth(G=1V/V):600MHz –Large-signalbandwidth(2VPP):200MHz –Slewrate:750V/μs •Highprecision: –Inputoffsetvoltage:250μV(maximum) –Inputoffsetvoltagedrift:3.5μV/°C(maximum) •Inputvoltagenois

TI1Texas Instruments

德州仪器美国德州仪器公司

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