3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

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3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

3-MICROON CMOS GATE ARRAYS

Renesas

瑞萨

(UPD65000 Series) 3-MICRON CMOS Gate Arrays

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瑞萨