丝印：D65；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • These diodes are also available in other case    styles and configurations including: the dual    diode common cathode configuration with type    designation DZ23, the single diode SOT-23    case with the type designation BZX84C, and the    single diode SOD-123 case with the type

文件：122.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：D65；Package：SOT-23；Small Signal Zener Diodes, Dual

FEATURES • These diodes are also available in other case    styles and configurations including: the dual    diode common cathode configuration with type    designation DZ23, the single diode SOT-23    case with the type designation BZX84C, and the    single diode SOD-123 case with the type

文件：122.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：D65；Package：SC70；SN74LVC1G175 Single D-Type Flip-Flop With Asynchronous Clear

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inse

文件：1.78542 Mbytes 页数：32 Pages

TI

德州仪器

丝印：D65；Package：SC70；SN74LVC1G175 Single D-Type Flip-Flop With Asynchronous Clear

1 Features 1• Available in the Texas Instruments NanoFree™ Package • Supports 5-V VCC Operation • Inputs Accept Voltages to 5.5 V • Supports Down Translation to VCC • Max tpd of 4.3 ns at 3.3 V • Low Power Consumption, 10-μA Max ICC • ±24-mA Output Drive at 3.3 V • Ioff Supports Live Inse

文件：1.78542 Mbytes 页数：32 Pages

TI

德州仪器

3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

3-MICROON CMOS GATE ARRAYS

Description The μD65000 (CMOS-2) series of gate arrays are low-power, high-speed devices featuring 3-micron silicon gate CMOS technology. The basic cell on the chip consists of four transistors, two P-channel and two N-channel, with double-layer metal Interconnects. Features

文件：658.41 Kbytes 页数：11 Pages

NEC

瑞萨

CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS

Description NECs CMOS-6 gate array families (CMOS-6, CMOS-6A, CMOS-6V and CMOS-6X) are ultra-high performance, sub-micron effective channel length CMOS products created for high-integration ASIC applications.

文件：743.65 Kbytes 页数：15 Pages

NEC

瑞萨

D Series - Standard D Shells

Features: • Top or side knockout cable entry. • Two long finger jack screws (59mm). • Two short jack screws (13mm). • 4/40 UNC jack screw thread. • Side cable entry only suitable with short jack screws. • Flame retardant ABS. • Nickel plated steel screws and clamp. • Two countersunk fixing

文件：310.68 Kbytes 页数：7 Pages

MULTICOMP

易络盟

D Series - Standard D Shells

Features: • Top or side knockout cable entry. • Two long finger jack screws (59mm). • Two short jack screws (13mm). • 4/40 UNC jack screw thread. • Side cable entry only suitable with short jack screws. • Flame retardant ABS. • Nickel plated steel screws and clamp. • Two countersunk fixing

文件：310.68 Kbytes 页数：7 Pages

MULTICOMP

易络盟

D Series - Standard D Shells

Features: • Top or side knockout cable entry. • Two long finger jack screws (59mm). • Two short jack screws (13mm). • 4/40 UNC jack screw thread. • Side cable entry only suitable with short jack screws. • Flame retardant ABS. • Nickel plated steel screws and clamp. • Two countersunk fixing

文件：310.68 Kbytes 页数：7 Pages

MULTICOMP

易络盟