Complementary Silicon Power Transistors

These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.

Features

• Fast Switching -  tf= 90 ns (Max)

• Key Parameters Specified @ 100°C

• Low Collector-Emitter Saturation Voltage - VCE(sat)= 1.0 V (Max) @ 8.0 A

• Complementary Pairs Simplify Circuit Designs

• Pb-Free Packages are Available*

D45VH10G属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的D45VH10G晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。