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UPD431000AGW-A10	文件：892.69 Kbytes Page：30 Pages	MOSINTEGRATEDCIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD431000AGW-A10	文件：227.57 Kbytes Page：32 Pages	1M-BITCMOSSTATICRAM128K-WORDBY8-BIT SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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UPD431000AGW-A10

文件：892.69 Kbytes

Page：30 Pages

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

UPD431000AGW-A10

文件：227.57 Kbytes

Page：32 Pages

1M-BITCMOSSTATICRAM128K-WORDBY8-BIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

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