首页 >D4014BC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
QUADRECEIVERCHIP | TITexas Instruments 德州仪器美国德州仪器公司 | TI | ||
BroadbandLNA/LinearDriverTuningRange:0.1to6.0GHz Features Reference:5V/60mA/2.5GHz •EVBNF:0.80dB •Gain:16.5dB •OP1dB:24.0dBm •OIP3:39.0dBm Reference:8V/110mA/2.5GHz •EVBNF:0.83dB •Gain:17.0dB •OP1dB:28.3dBm •OIP3:44.0dBm •FlexibleBiasVoltageandCurrent •Process:GaAspHEMT Applications •LinearDriver/LNA | GUERRILLA Guerrilla RF, Inc. | GUERRILLA | ||
BroadbandLNA/LinearDriverTuningRange:0.1to6.0GHz Features Reference:5V/60mA/2332.5MHz •EVBNF:0.80dB •Gain:17.5dB •OP1dB:24.0dBm •OIP3:39.0dBm •TestedtoAEC-Q100Grade2 •100DeviceReflowatAssembly •100OpticalDieInspection •FlexibleBiasVoltageandCurrent •Process:GaAspHEMT •InternallyMatchedto50Ω Applicatio | GUERRILLA Guerrilla RF, Inc. | GUERRILLA | ||
BroadbandLNA/LinearDriverTuningRange:0.1to6.0GHz | GUERRILLA Guerrilla RF, Inc. | GUERRILLA | ||
8-STAGESTATICSHIFTREGISTERS DESCRIPTION TheHCC4014B,HCC4021B(extendedtemperaturerange)andtheHCF4014B,HCF4021B(intermediatetemperaturerange)aremonolithicintegratedcircuits,availablein16-leaddualin-lineplasticorceramicpackageandplasticmicropackage. 4014BSYNCHRONOUSPARALLELORSERIALINPUT/ | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
RadHardenedhighvoltagecomplementaryMOSlogicseries | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hard,highvoltage,CMOSlogicseries Features •ESCCqualified •18VAbsolutemaximumratings •3Vto15Voperatingvoltage •Hermeticpackages •Rad-hard100krad(Si)TID •SELimmuneupto119MeV.cm²/mg •SEUimmuneupto119MeV.cm²/mg •-55°Cto+125°Ctemperaturerange •ESCCspecificationavailableonESCCwebsi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hardhighvoltageCMOSlogicseries | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hard,highvoltage,CMOSlogicseries Features •ESCCqualified •18VAbsolutemaximumratings •3Vto15Voperatingvoltage •Hermeticpackages •Rad-hard100krad(Si)TID •SELimmuneupto119MeV.cm²/mg •SEUimmuneupto119MeV.cm²/mg •-55°Cto+125°Ctemperaturerange •ESCCspecificationavailableonESCCwebsi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Rad-hard,highvoltage,CMOSlogicseries Features •ESCCqualified •18VAbsolutemaximumratings •3Vto15Voperatingvoltage •Hermeticpackages •Rad-hard100krad(Si)TID •SELimmuneupto119MeV.cm²/mg •SEUimmuneupto119MeV.cm²/mg •-55°Cto+125°Ctemperaturerange •ESCCspecificationavailableonESCCwebsi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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