D3V3L1B2T中文资料数据传输线保护数据手册Diodes规格书
D3V3L1B2T规格书详情
描述 Description
Designed to replace multilayer varistors (MLVs) in portable applications where low operating voltage is vital, DIODES™ D3V3L1B2T offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs. D3V3L1B2T is designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE).
技术参数
- 制造商编号
：D3V3L1B2T
- 生产厂家
：Diodes
- Maximum Peak Pulse Current IPP @ 8x20±s Max
：5
- AEC Qualified
：Yes
- Configuration
：Single (Bi-Directional)
- Channel Input CapacitanceCT Typ(pF)
：11 pF
- Reverse Standoff Voltage VRWM(V)
：3.3 V
- Breakdown VoltageVBR Min(V)
：3.5 V
- Typ Reverse Leakage Current IR @ VRWM Max(µA)
：0.05 µA
- Maximum Clamping Voltage @ MaxPeak Pulse CurrentVC(V)
：18 V
- VESD IEC61000-4-2 Contact Discharge(kV)
：26 kV
- Packages
：SOD523
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
DIODES/美台 |
25+ |
DFN101-3 |
50000 |
原装正品,假一罚十! |
询价 | ||
DIODES |
18+ |
DFN |
2996 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
DIODES/美台 |
24+ |
DFN |
8540 |
只做原装正品现货或订货假一赔十! |
询价 | ||
原装原厂规格 |
23+ |
原封 |
2000 |
电子元器件供应/半导体配套全新 |
询价 | ||
DiodesZetex |
23+ |
TVS二极管 |
5864 |
原装原标原盒 给价就出 全网最低 |
询价 | ||
原装DIODES |
19+ |
DFN |
20000 |
询价 | |||
DIODES |
20+ |
X2-DFN1010-3 |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
询价 | ||
DIODES/美台 |
24+ |
DFN1010-3 |
60000 |
询价 |
