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HCT-373

HighCurrentToroidalInductors

API

API Delevan Inc.

HCT373M

OCTALTRANSPARENTD-TYPELATCHES

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

HCTR-373

HighCurrentToroidalInductors

API

API Delevan Inc.

HCTS373D

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373D

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373DMSR

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373DMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373DTR

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373HMSR

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373HMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373K

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373K

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373KMSR

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373KMSR

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373KTR

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373MS

RadiationHardenedOctalTransparentLatch,Three-State

Description TheIntersilHCTS373MSisaRadiationHardenedoctaltransparentthree-statelatchwithanactive-lowoutputenable.TheoutputsaretransparenttotheinputswhentheLatchEnable(LE)isHIGH.WhentheLatchEnable(LE)goesLOW,thedataislatched.TheOutputEnable(OE)controls

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HCTS373MS

RadiationHardenedOctalTransparentLatch,Three-State

Features •3MicronRadiationHardenedCMOSSOS •TotalDose200KRAD(Si) •SEPEffectiveLETNoUpsets:>100MEV-cm2/mg •SingleEventUpset(SEU)Immunity1x1012RAD(Si)/s •DoseRateUpset>1010RAD(Si)/s20nsPulse •Lat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

HCTS373T

RadiationHardenedOctalTransparentLatch,Three-State

Intersil’sSatelliteApplicationsFlowTM(SAF)devicesarefullytestedandguaranteedto100kRADtotaldose.TheseQMLClassTdevicesareprocessedtoastandardflowintendedtomeetthecostandshorterlead-timeneedsoflargevolumesatellitemanufacturers,whilemaintainingahighlevelof

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

HE373B

BroadbandAmplifier

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成电路河北博威集成电路有限公司

HE373C

BroadbandAmplifier

BOWEIBOWEI Integrated Circuits CO.,LTD.

博威集成电路河北博威集成电路有限公司

详细参数

  • 型号:

    D373

  • 制造商:

    TE Connectivity

  • 功能描述:

    NC-381381-2.5-9 - Bag

  • 功能描述:

    LABEL ID PRODUCT

  • 功能描述:

    Labels Thermal Transfer Printable Label Nylon Cloth White 38.1x38.1mm

供应商型号品牌批号封装库存备注价格
NEC
02+
33
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NEC
2023+
N/A
8700
原装现货
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TI
2020+
QFP
864
百分百原装正品 真实公司现货库存 本公司只做原装 可
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NEC
23+
CDIP
8293
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NEC
23+
SOP-8
18000
询价
原厂正品
23+
CDIP22
5000
原装正品,假一罚十
询价
NEC
22+
DIP
2987
绝对全新原装现货供应!
询价
TI
23+
QFP
8560
受权代理!全新原装现货特价热卖!
询价
TI
DIP8
3200
原厂旗下一级分销商!原装正品现货!假一罚十!
询价
NEC
2018+
DIP
26976
代理原装现货/特价热卖!
询价
更多D373供应商 更新时间2024-5-31 16:30:00