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UPD23C16000BL

MOSINTEGRATEDCIRCUIT

Features •Wordorganization 2,097,152wordsby8bits(BYTEmode) 1,048,576wordsby16bits(WORDmode) •Operatingsupplyvoltage:VCC=2.7Vto3.6V

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD23C16000BL

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGX

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGX-XXX

MOSINTEGRATEDCIRCUIT

Features •Wordorganization 2,097,152wordsby8bits(BYTEmode) 1,048,576wordsby16bits(WORDmode) •Operatingsupplyvoltage:VCC=2.7Vto3.6V

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD23C16000BLGX-XXX

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGX-XXX-A

MOSINTEGRATEDCIRCUIT

Features •Wordorganization 2,097,152wordsby8bits(BYTEmode) 1,048,576wordsby16bits(WORDmode) •Operatingsupplyvoltage:VCC=2.7Vto3.6V

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD23C16000BLGY-MJH

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGY-MKH

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGY-XXX-MJH

16M-BITMASK-PROGRAMMABLEROM2M-WORDBY8-BIT(BYTEMODE)/1M-WORDBY16-BIT(WORDMODE)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD23C16000BLGY-XXX-MJH

MOSINTEGRATEDCIRCUIT

Features •Wordorganization 2,097,152wordsby8bits(BYTEmode) 1,048,576wordsby16bits(WORDmode) •Operatingsupplyvoltage:VCC=2.7Vto3.6V

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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