| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION •DCCurrentGain-:hFE=40(Min)@lc=0.15A •ComplementtoTypeBD234/236/238 APPLICATIONS •Designedforusein5-10wattaudioamplifiersanddriversutilizingcomplementaryorquasicomplementarycircuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
GERMANIOVETRANZISTORY | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
EPITAXIALSILICONPOWERTRANSISTORS EPITAXIALSILICONPOWERTRANSISTORS IntendedforuseinMediumPowerLinearSwitchingApplications | CDIL CDIL | CDIL | ||
TO-126Plastic-EncapsulateTransistors FEATURES ComplementtoBD234/BD236/BD238respectively | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
NPNSiliconRFTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor NPNSiliconRFTransistor ●Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunication systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA ●PoweramplifiersforDECTandPCNsystems ●Integratedemitterballastresistor ●fT=5.5GHz | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
NPNSiliconRFTransistor(Forlow-distortionbroadbandoutputamplifierstagesinantennaandtelecommunications) NPNSiliconRFTransistor •Forlow-distortionbroadbandoutputamplifier stagesinantennaandtelecommunications systemsupto2GHzatcollectorcurrentsfrom 120mAto250mA •PoweramplifiersforDECTandPCNsystems •Integratedemitterballastresistor •fT=5.5GHz | SIEMENS Siemens Ltd | SIEMENS | ||
NPNvideotransistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
NPNvideotransistor DESCRIPTION NPNvideotransistorinaSOT128B(TO-202)plasticpackage. PNPcomplement:BFQ255A. FEATURES •Highbreakdownvoltages •Lowoutputcapacitance •Highgainbandwidth •Goodthermalstability •Goldmetallizationensuresexcellentreliability. APPLICATIONS •CRTamplifierbuf | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
BATTERYHOLDERS&SNAPSAA,AAA,C,D&COINCELL | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 | ADAM-TECH | ||
OptiMOS??2OptiMOS??P2SmallSignalTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??2OptiMOS??P2SmallSignalTransistor Features •ComplementaryP+Nchannel •Enhancementmode •SuperLogiclevel(2.5Vrated) •Avalancherated •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Single-channelisolatedgatedriverICwithadjustableDESATandsoft-off Features •600V,650V,900V,and1200VIGBTs,SiCandSiMOSFETs •40Vabsolutemaximumoutputsupplyvoltage •±3A,±6A,and±9Atypicalsinkingandsourcingpeakoutputcurrent •SeparatesourceandsinkoutputsforhardswitchingandwithactiveMillerclamp/clampdriver •Adjustme | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
Enhancementmode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS??Small-Signal-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconControlledRectifier | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
ContactForm:C235S:1a/C335S:2aLoadVoltage:80VMaximum | COTO 科特 | COTO | ||
customerproductspecificationsheet specifications: 1.i-pexmhfplug,p/n:forrg178cable:20278-112r-18,for1,37mmcable:20351-112r-37 2.seecablesizeoptions 3.tncstraightbulkheadjackwitho-ringratedthip67/68,p/n:rfct-tnc006-78 environmental: a.bulkheadmountedconnector(rfct-tnc006-f78)rated tothef | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
DC-18GHzSP5TSwitch KeyFeatures •Broadbanddesign:DCto18GHz •Lowinsertionlossof2.2dBat10GHz •Highisolationof30to50dBat10GHz •Non-reflectivedesign •Integrated3:8TTLdecoder •AllOFFstateincluded Performanceistypicalacrossfrequency.Please referenceelectricalspecification | QORVOQorvo, Inc Qorvo | QORVO | ||
PowerTransistorNPN-SiliconPowerTransistorChip PROCESSDETAILS ProcessGLASSPASSIVATEDMESA DieSize106x106MILS DieThickness12MILS BaseBondingPadArea25x33MILS EmitterBondingPadArea30x36MILS TopSideMetallizationAl50,000Å BackSideMetallizationAg10,000Å | CentralCentral Semiconductor Corp 美国中央半导体 | Central |
详细参数
- 型号：
D235ERW
- 制造商：
MPD
- 制造商全称：
MicroPower Direct, LLC
- 功能描述：
Low Cost, Miniature 2W SIP, Wide Input DC/DC Con vert ers
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UPD |
21+ |
SIP |
1345 |
厂家代理原装正品现货特价供应DC-DC电源模 |
询价 | ||
NEC |
02+ |
TO-66 |
1633 |
询价 | |||
NEC |
2023+ |
TO-66 |
8700 |
原装现货 |
询价 | ||
SAK |
23+ |
TO-3P |
18000 |
询价 | |||
CHMC |
21+ROHS |
SOP14 |
60000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
N/A |
52 |
原装正品现货供应 |
询价 | ||||
N/A |
21+ |
35200 |
一级代理/放心采购 |
询价 | |||
N/A |
最新 |
52 |
原装正品 现货供应 价格优 |
询价 | |||
N/A |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
询价 | |||
NEC |
2022+ |
DIP |
2820 |
只售进口原装公司现货! |
询价 |
相关规格书
更多- D235I
- D236
- D236ERW
- D236NP
- D237
- D2376AE
- D23777-000
- D237I
- D-238
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- D-240-100
- D24019-21
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- D240505NS-1W
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- D240505XNS-2W
- D240505XS-W5
- D240509XD-1W
- D24051QM96G4Q1
- D24053-000
- D24067IM96G4Q1
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- D2410
- D2410-10C3
- D2-41051-QR-TK
- D2410F
- D2410G
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相关库存
更多- D235RW
- D2364
- D236I
- D236RW
- D23743-000
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- D238S12SEITE1BIS5
- D2396
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- D-24
- D24000LP18PF/15
- D2401
- D24019-000
- D2402
- D240505ND-1W
- D240505XD-1W
- D240505XNS-1W
- D240505XS-1W
- D24050-601
- D240509XND-1W
- D24052-5001
- D24066QM96G4Q1
- D24083-000
- D240909NS-1W
- D240JCTT1W
- D240LC40-4000
- D240SC 3M-4000
- D240SC 4M-4000
- D240SC4M
- D240SC4M-4000
- D240SC6M
- D240SC6M-4000
- D241
- D2410-10
- D2-41051-QR
- D2410-B
- D2410FPG-10
- D2410PG
- D24110-10
- D241212NS-1W
- D24125
