SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.1743 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：D2065C5；Package：PG-TO247-3；SiC Silicon Carbide Diode

1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thin-wafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved therm

文件：1.1743 Mbytes 页数：11 Pages

Infineon

英飞凌

ROHM
TO-252

ROHM

罗姆

上传：深圳市华康联电子科技有限公司（销售一部）

ROHM
TO-220F

ROHM

罗姆

上传：深圳市华康联电子科技有限公司（销售一部）

英飞凌

英飞凌

上传：深圳市铭威达电子科技有限公司