丝印：D1612C5；Package：PG-TO263-2；5th Generation CoolSiCTM 1200V Schottky Diode

Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance 

文件：1.07298 Mbytes 页数：12 Pages

INFINEON

英飞凌

Standard Recovery Diodes (Stud and Flat Base Type)

NAINA(NSL)

Standard Recovery Diodes (Stud and Flat Base Type)

NAINA(NSL)

Standard Recovery Diodes (Stud and Flat Base Type)

NAINA(NSL)

包装：散装 类别：电缆，电线 - 管理 热缩管 描述：HEATSHRINK 1/4\

TE Connectivity Raychem Cable Protection