NPN SILICON RF POWER TRANSISTOR

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ASI

NPN SILICON RF POWER TRANSISTOR

ASI Semiconductor

Breakover Diodes

Breakover Diodes Applications ● Transient voltage protection ● High-voltage switches ● Crowbar ● Lasers ● Pulse generators Single Breakover Diode Breakover Diode Modules

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IXYS

艾赛斯

NPN SILICON RF POWER TRANSISTOR

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ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI VHB1-28T is Designed for Class C, 28 V High Band Applications up to 175 MHz. FEATURES: • Class C Operation • PG = 13 dB at 1.0 W/175 MHz • Omnigold™ Metalization System

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ASI