SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT3904 and CZT3906 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. MARKING: FULL PART NUMBER

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PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT4033 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.

文件：92.43 Kbytes 页数：2 Pages

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NPN SILICON POWER TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 is an NPN silicon power transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high current amplification and switching capability.

文件：101.59 Kbytes 页数：2 Pages

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PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

文件：92.57 Kbytes 页数：2 Pages

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TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: -0.6 A Collector-base voltage V(BR)CBO: -160 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

文件：164.53 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

SOT-223 Plastic-Encapsulate Transistors

FEATURES High Voltage High Voltage Amplifier Application

文件：1.43513 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

Epitaxial Planar Transistor

Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages.

文件：665.69 Kbytes 页数：2 Pages

SECOS

喜可士

PNP Silicon Transistor

PNP Silicon Transistor

文件：35.81 Kbytes 页数：1 Pages

KEXIN

科信电子

ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5401E is a PNP Silicon Transistor, packaged in an SOT-223 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING: FULL PART NUMBER FEATURES: • High Collector Breakdown Voltage 250V • Low Leakage Current 50n

文件：152.07 Kbytes 页数：2 Pages

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NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

文件：93.01 Kbytes 页数：2 Pages

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