2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

2048K x 8 SRAM Module 2048K x 8 SRAM Module

Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs —Access time of 70 ns • Low active power —605 mW (max.), 2M x 8 • Double-sided SMD technology • TTL-compatible inputs and outputs • Small footprint SIP —PCB layout area of 0.72 sq. in. • 2V data retention (L ver

文件：251.13 Kbytes 页数：8 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司