Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Infineon

英飞凌

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

Clocked 512 x 9, 2K x 9 FIFOs

Functional Description The CY7C441 and CY7C443 are high-speed, low-power, first-in first-out (FIFO) memories with clocked read and write interfaces. Both FIFOs are 9 bits wide. The CY7C441 has a 512 word by 9 bit memory array, while the CY7C443 has a 2048 word by 9 bit memory array. These devices

文件：223.6 Kbytes 页数：15 Pages

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司