CY7C4221V中文资料赛普拉斯数据手册PDF规格书

特性 Features

• High-speed, low-power, first-in, first-out (FIFO) memories

• 64 x 9 (CY7C4421V)

• 256 x 9 (CY7C4201V)

• 512 x 9 (CY7C4211V)

• 1K x 9 (CY7C4221V)

• 2K x 9 (CY7C4231V)

• 4K x 9 (CY7C4241V)

• 8K x 9 (CY7C4251V)

• High-speed 66-MHz operation (15-ns read/write cycle time)

• Low power (ICC = 20 mA)

• 3.3V operation for low power consumption and easy integration into low-voltage systems

• 5V-tolerant inputs VIH max = 5V

• Fully asynchronous and simultaneous read and write operation

• Empty, Full, and Programmable Almost Empty and Almost Full status flags

• TTL compatible

• Output Enable (OE) pin

• Independent read and write enable pins

• Center power and ground pins for reduced noise