CY7C199N-12ZXC中文资料赛普拉斯数据手册PDF规格书

Functional Description

The CY7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power

consumption by 81 when deselected. The CY7C199NN is in the standard 300-mil-wide DIP, SOJ, and LCC packages.

特性 Features

•High speed

—12 ns

• Fast tDOE

• CMOS for optimum speed/power

• Low active power

— 467 mW (max, 12 ns “L” version)

• Low standby power

— 0.275 mW (max, “L” version)

• 2V data retention (“L” version only)

• Easy memory expansion with CEand OEfeatures

• TTL-compatible inputs and outputs

• Automatic power-down when deselected